SOI / Silicon-on-insulator -SIMOX
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silicon on insulator
SOI is the abbreviation for Silicon-on-insulator, a structure where a thin silicon layer lies atop an insulator, such as silicon dioxide, that may be a silicon or other substrate. This allows for isolation of the active silicon layer containing circuit structures from the bulk substrate (or handle wafer) , permitting improved device performance for CMOS devices and more flexible integration schemes for electronic, MEMS and MOEMS devices.
It adopts SIMOX, Bonding and Simbond methods to provide various kinds of SOI products.
SIMOX, which stands for Separation by Implantation of Oxygen, is a process that we uses to create an insulating layer between the layers of a bulk silicon wafer. There are two essential stages of the process: ion implantation and annealing.
In the implantation stage, oxygen ions are implanted in the silicon wafer and react with the silicon to form silicon dioxide precipitates. However, the implantation causes considerable damage to the wafer and the layer of silicon dioxide precipitates is not continuous. Thus high-temperature annealing helps repair the damage and form the oxide precipitates into a continuous layer. Now the silicon's quality is restored and the buried oxide (BOX) layer can act as a highly effective insulator.